smd type ic smd type transistors 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SC5310 features adoption of fbet, mbit processes. large current capacitance. low collector-to-emitter saturation voltage. high-speed switching. ultrasmall package facilitates miniaturization in end products. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 6v collector current i c 1a collector current (pulse) i cp 3a base current i b 200 ma collector dissipation * p c 250 mw jumction temperature t j 150 storage temperature t stg -55to+150 * mounted on a glass-epoxy board (20301.6mm) product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
smd type ic smd type transistors electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = 20v, i e =0 0.1 a emitter cutoff current i ebo v eb =3v,i c =0 0.1 a dc current gain h fe v ce =2v , i c = 100ma 135 400 gain bandwidth product f t v ce = 10v , i c = 50ma 150 mhz output capacitance c ob v cb = 10v , f = 1.0mhz 19 pf collector-emitter saturation voltage v ce(sat) i c = 500ma , i b = 25ma 100 200 mv base-emitter saturation voltage v be(sat) i c = 500ma , i b = 25ma 0.85 1.2 v collector-base breakdown voltage v (br)cbo i c = 10a , i e =0 30 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 25 v emitter-base breakdown voltage v (br)ebo i e = 10a , i c =0 6 v turn-on time t on 60 ns storage time t stg 500 ns fall time t f 25 ns h fe classification marking rank 5 6 hfe 135 270 200 400 nn smd type ic smd type transistors 2SC5310 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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